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20222025
most citedTowards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to -Ga2O3

15 citations · 27 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2024★ 2 cited

Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge

Wenshan Chen, Kingsley Egbo, Huaide Zhang +2

The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thi…