12 citations · 15 across the 5 of their papers we have counts for
3 papers · 1 filter
Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects
Moritz Engl, Wassim Hamouda, Ines Häusler +5
The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorpo…
Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study
Oliver Rehm, Lutz Baumgarten, Roberto Guido +6
Aluminum scandium nitride (AlScN) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semicond…
Weight update in ferroelectric memristors with identical and non-identical pulses
Suzanne Lancaster, Maximilien Remillieux, Moritz Engl +5
Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation…