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20232026
most citedAlgorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy

2 citations · 3 across the 5 of their papers we have counts for

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physics.app-ph2025★ 1 cited

Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth

Diandian Zhang, Nirosh M. Eldose, Dinesh Baral +9

Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology,…