2 citations · 3 across the 5 of their papers we have counts for
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Neutralizing Optical Defects in GeSn
Nirosh M. Eldose, Dinesh Baral, Diandian Zhang +7
Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to…
Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
Jie Zhou, Haibo Wang, Yifu Guo +19
Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, th…
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
Calbi Gunder, Mohammad Zamani Alavijeh, Emmanuel Wangila +7
The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-qua…