13 citations · 24 across the 8 of their papers we have counts for
3 papers · 2 filters
Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm Current Density
Zhanbo Xia, Chandan Joishi, Shahadat H. Sohel +4
We design and demonstrate selective injection GaN heterojunction bipolar transistors that utilize a patterned base for selective injection of electrons from the emitter. The design…
Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor
Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi +4
GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performan…
Design and Simulation of a III-Nitride Light Emitting Transistor
Mohammad Awwad, Sheikh Ifatur Rahman, Chandan Joishi +2
This paper describes the design and characteristics of monolithically integrated three-terminal gated III-Nitride light emitting diodes (LEDs) devices. The impact of channel doping…