activity
20212025
most citedHole spin driving by strain-induced spin-orbit interactions

58 citations · 197 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci2025

Valley Splittings in Si/SiGe Heterostructures from First Principles

Lukas Cvitkovich, Tancredi Salamone, Christoph Wilhelmer +3

We compute valley splittings in Si/SiGe superlattices using ab initio density functional theory (DFT). This first-principle approach is expected to provide an excellent description…

cond-mat.mes-hall2025★ 2 cited

Variability of hole spin qubits in planar Germanium

Biel Martinez, Yann-Michel Niquet

Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical…

cond-mat.mes-hall2024

Strain engineering in Ge/GeSi spin qubits heterostructures

Lorenzo Mauro, Esteban A. Rodríguez-Mena, Biel Martinez +1

The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane -factors and out-of-plane -factor $g_z^*\gtrsi…

cond-mat.mes-hall2024★ 1 cited

Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout

Biel Martinez, Silvano de Franceschi, Yann-Michel Niquet

The scalability of spin qubit devices is conditioned by qubit-to-qubit variability. Disorder in the host materials indeed affects the wave functions of the confined carriers, which…

cond-mat.mes-hall2023★ 21 cited

Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits

Esteban A. Rodríguez-Mena, José Carlos Abadillo-Uriel, Gaëtan Veste +4

We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that sym…

cond-mat.mes-hall2023★ 2 cited

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Bernhard Klemt, Victor El-Homsy, Martin Nurizzo +16

For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from a…

cond-mat.mes-hall2022★ 58 cited

Hole spin driving by strain-induced spin-orbit interactions

José Carlos Abadillo-Uriel, Esteban A. Rodríguez-Mena, Biel Martinez +1

Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here…

cond-mat.mes-hall2022★ 42 cited

Hole spin manipulation in inhomogeneous and non-separable electric fields

Biel Martinez, José Carlos Abadillo-Uriel, Esteban A. Rodríguez-Mena +1

The usual models for electrical spin manipulation in semiconductor quantum dots assume that the confinement potential is separable in the three spatial dimensions and that the AC d…

cond-mat.mes-hall2021★ 28 cited

Two-body Wigner molecularization in asymmetric quantum dot spin qubits

José C. Abadillo-Uriel, Biel Martinez, Michele Filippone +1

Coulomb interactions strongly influence the spectrum and the wave functions of few electrons or holes confined in a quantum dot. In particular, when the confinement potential is no…

cond-mat.mes-hall2021★ 43 cited

Variability of electron and hole spin qubits due to interface roughness and charge traps

Biel Martinez, Yann-Michel Niquet

Semiconductor spin qubits may show significant device-to-device variability in the presence of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout or process…