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cond-mat.mtrl-sci2025
Electrical Characterization of High-k (k>115) Crystalline SrTiO3 (STO) thin film integration with GaN with Nanomembrane Transfer Process
Md Tahmidul Alam, Kyoungjun Lee, Guangying Wang +2
High-k (115), crystalline SrTiO3 (STO) thin film was transferred on GaN for potential applications in power devices (transistor and diodes) by nanomembrane transfer method and the…
physics.app-ph2025
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
Ruixin Bai, Swarnav Mukhopadhyay, Michael Elliott +9
In this work, we demonstrate a passivation-free Ga-polar recessed-gate AlGaN/GaN HEMT on a sapphire substrate for W-band operation, featuring a 5.5 nm Al0.35Ga0.65N barrier under t…