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cond-mat.mtrl-sci2023
Band alignment of grafted monocrystalline Si (001)/-GaO (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Jiarui Gong, Jie Zhou, Ashok Dheenan +11
Beta-phase gallium oxide (-GaO) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates.…
physics.app-ph2023★ 9 cited
Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
Swarnav Mukhopadhyay, Cheng Liu, Jiahao Chen +5
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 Ω/ \Box ) is repor…