9 citations · 10 across the 7 of their papers we have counts for
3 papers · 1 filter
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque +2
More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power convert…
Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with free carrier concentration using close-coupled showerhead MOCVD reactor
Swarnav Mukhopadhyay, Parthasarathy Seshadri, Mobinul Haque +6
Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization…
High Voltage (~2 kV) field-plated Al0.64Ga0.36N-channel HEMTs
Md Tahmidul Alam, Jiahao Chen, Kenneth Stephenson +5
High voltage (~2 kV) AlGaN-channel HEMTs were fabricated with 64% Aluminum composition in the channel. The average on-resistance was ~75 ohm. mm (~21 miliohm. cm^2) for LGD = 20 mi…