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C. Tegenkamp

8 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author3
  • last author4

Across the 7 of 8 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci4
  • cond-mat.mes-hall3
  • cond-mat.str-el1
same name
  • C. Tegenkamp — 13 papers, h 30

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

collaborators
Showing cond-mat.mtrl-sciShow all

4 papers · 1 filter

cond-mat.mtrl-sci2025

From stripes to hexagons: strain-induced 2D Pb phases confined between graphene and SiC

Markus Gruschwitz, Sergii Sologub, Chitran Ghosal +4

The intercalation of metals beneath graphene offers a powerful route to stabilizing and protecting novel two-dimensional (2D) phases. The epitaxial growth of Pb monolayers on SiC(0…

cond-mat.mtrl-sci2025

Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface

Niclas Tilgner, Zamin Mamiyev, Susanne Wolff +4

Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two…

cond-mat.mtrl-sci2025

Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity

S. Wundrack, M. Bothe, M. Jaime +15

Metal intercalation in epitaxial graphene enables the emergence of proximity-induced superconductivity and modified quantum transport properties. However, systematic transport stud…

cond-mat.mtrl-sci2025

Growth dynamics of graphene buffer layer formation on ultra-smooth SiC(0001) surfaces

Julia Guse, Stefan Wundrack, Marius Eckert +14

In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first mon…

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