Electronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas
arXiv:2412.01329 · doi:10.1103/vk9s-zzcw
Abstract
Graphene, renowned for its exceptional electronic and optical properties as a robust 2D material, traditionally lacks electronic correlation effects. Proximity coupling offers a promising method to endow quantum materials with novel properties. In this study, we achieve such a proximity coupling by intercalating Sn between the buffer layer of graphene on SiC(0001), allowing us to explore the coupling between a correlated 2D electron gas and a Dirac metal. This results in the stabilization of Sn- superlattice structures at the interface, which reveal Mott-Hubbard bands, in excellent agreement with both experimental observations and theoretical predictions. Additionally, we found signatures of quasiparticle peaks close to the Fermi energy, in detail depending on the hybridization strength and doping level.
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