Heterogeneous Ta-dichalcogenide bilayer: heavy fermions or doped Mott physics?

Abstract

Controlling and understanding electron correlations in quantum matter is one of the most challenging tasks in materials engineering. In the past years a plethora of new puzzling correlated states have been found by carefully stacking and twisting two-dimensional van der Waals materials of different kind. Unique to these stacked structures is the emergence of correlated phases not foreseeable from the single layers alone. In Ta-dichalcogenide heterostructures made of a good metallic 1H- and a Mott-insulating 1T-layer, recent reports have evidenced a cross-breed itinerant and localized nature of the electronic excitations, similar to what is typically found in heavy fermion systems. Here, we put forward a new interpretation based on first-principles calculations which indicates a sizeable charge transfer of electrons (0.4-0.6 e) from 1T to 1H layers at an elevated interlayer distance. We accurately quantify the strength of the interlayer hybridization which allows us to unambiguously determine that the system is much closer to a doped Mott insulator than to a heavy fermion scenario. Ta-based heterolayers provide therefore a new ground for quantum-materials engineering in the regime of heavily doped Mott insulators hybridized with metallic states at a van der Waals distance.

arXiv comment9 pages, 5 figures

References in corpus (21)

• A continuous-time solver for quantum impurity models
• Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2
• Three Dimensional Metallic and Two Dimensional Insulating Behavior in Tantalum Dichalcogenides
• Imaging spinon density modulations in a 2D quantum spin liquid
• w2dynamics: Local one- and two-particle quantities from dynamical mean field theory
• Gate-tunable heavy fermions in a moiré Kondo lattice
• Visualization of Topological Boundary Modes Manifesting Topological Nodal-Point Superconductivity
• Local magnetic moments in iron and nickel at ambient and Earth's core conditions
• Spectroscopic signatures of a bandwidth-controlled Mott transition at the surface of 1T-TaSe${}_2$
• Quantum dynamical screening of the local magnetic moment in Fe-based superconductors
• Superconductivity in the Two-Band Hubbard Model in Infinite Dimensions
• Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS${}_2$-Related Layered Materials
• Chiral Kondo Lattice in Doped MoTe${}_2$/WSe${}_2$ Bilayers
• Gate-tunable heavy fermion quantum criticality in a moiré Kondo lattice
• The Orbitally Selective Mott Phase in Electron Doped Twisted TMDs: A Possible Realization of the Kondo Lattice Model
• Deconfinement of Mott Localized Electrons into Topological and Spin-Orbit Coupled Dirac Fermions
• Probing the phase transition to a coherent 2D Kondo lattice
• Chiral superconductivity in the alternate stacking compound 4Hb-TaS${}_2$
• Mott transitions with partially-filled correlated orbitals
• Artificial heavy fermions in a van der Waals heterostructure
• Evidence for ground state coherence in a two-dimensional Kondo lattice

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• Interlayer charge transfer induced by electronic instabilities in the natural van der Waals hetrostructure 4H${}_b$-TaS${}_2$
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