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20242026
most citedElectronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas

6 citations · 14 across the 10 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2026

The geometry of the CISS effect

P. Hedegård, A. Kazimir, C. Lamers +3

Using scanning tunneling microscopy, and a careful selection of chiral molecules and anchoring groups, we systematically carried out a series of magnetoresistance experiments. We o…

cond-mat.mtrl-sci2026

Ultrafast signatures of Dirac / flat-band hybrid states from time-resolved ARPES

Maria-Elisabeth Federl, Johannes Gradl, Franziska Bergmeier +12

Hybridization of highly itinerant Dirac electrons with localized flat-band states is predicted to yield emergent phenomena such as exotic heavy-fermion behaviour. Epitaxial graphen…

cond-mat.mes-hall2026

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Zamin Mamiyev, Niclas Tilgner, Narmina O. Balayeva +3

Confinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. Ho…

cond-mat.mes-hall2025

Intercalant-induced Kekule ordering and gap opening in quasi-free-standing graphene

Huu Thoai Ngo, Zamin Mamiyev, Niklas Witt +2

We present a comprehensive investigation of the structural and electronic properties of Sn intercalated buffer layers on SiC(0001) using low-temperature scanning tunneling microsco…

cond-mat.mtrl-sci2025

From stripes to hexagons: strain-induced 2D Pb phases confined between graphene and SiC

Markus Gruschwitz, Sergii Sologub, Chitran Ghosal +4

The intercalation of metals beneath graphene offers a powerful route to stabilizing and protecting novel two-dimensional (2D) phases. The epitaxial growth of Pb monolayers on SiC(0…

cond-mat.mtrl-sci2025★ 4 cited

Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface

Niclas Tilgner, Zamin Mamiyev, Susanne Wolff +4

Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two…

cond-mat.mtrl-sci2025

Lithographically-controlled liquid metal diffusion in graphene: Fabrication and magneto-transport signatures of superconductivity

S. Wundrack, M. Bothe, M. Jaime +15

Metal intercalation in epitaxial graphene enables the emergence of proximity-induced superconductivity and modified quantum transport properties. However, systematic transport stud…

cond-mat.mtrl-sci2025

Growth dynamics of graphene buffer layer formation on ultra-smooth SiC(0001) surfaces

Julia Guse, Stefan Wundrack, Marius Eckert +14

In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first mon…

cond-mat.mes-hall2025★ 4 cited

Mesoscopic scale study of lateral dynamics of Sn-intercalation of the buffer layer on SiC

Benno Harling, Zamin Mamiyev, Christoph Tegenkamp +1

The dynamics of Sn intercalation of the buffer layer on SiC was investigated with a frozen-in diffusion front using Kelvin Probe Force Microscopy. The technique allows to laterally…

cond-mat.mes-hall2025

Homogeneous doping of epitaxial graphene by Pb(111) islands: A magnetotransport study

Julian Koch, Sergii Sologub, Dorothee Sylvia Boesler +5

Proximity coupling is an effective approach for the functionalization of graphene. However, graphene's inertness inhibits the adsorption of closed films, thus favoring island growt…

cond-mat.str-el2024★ 6 cited

Electronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas

Chitran Ghosal, Siheon Ryee, Zamin Mamiyev +3

Graphene, renowned for its exceptional electronic and optical properties as a robust 2D material, traditionally lacks electronic correlation effects. Proximity coupling offers a pr…