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20242026
most citedElectronic correlations in epitaxial graphene: Mott states proximitized to a relativistic electron gas

6 citations · 14 across the 10 of their papers we have counts for

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cond-mat.mes-hall2026

The geometry of the CISS effect

P. Hedegård, A. Kazimir, C. Lamers +3

Using scanning tunneling microscopy, and a careful selection of chiral molecules and anchoring groups, we systematically carried out a series of magnetoresistance experiments. We o…

cond-mat.mes-hall2026

Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface

Zamin Mamiyev, Niclas Tilgner, Narmina O. Balayeva +3

Confinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. Ho…

cond-mat.mes-hall2025

Intercalant-induced Kekule ordering and gap opening in quasi-free-standing graphene

Huu Thoai Ngo, Zamin Mamiyev, Niklas Witt +2

We present a comprehensive investigation of the structural and electronic properties of Sn intercalated buffer layers on SiC(0001) using low-temperature scanning tunneling microsco…

cond-mat.mes-hall2025★ 4 cited

Mesoscopic scale study of lateral dynamics of Sn-intercalation of the buffer layer on SiC

Benno Harling, Zamin Mamiyev, Christoph Tegenkamp +1

The dynamics of Sn intercalation of the buffer layer on SiC was investigated with a frozen-in diffusion front using Kelvin Probe Force Microscopy. The technique allows to laterally…

cond-mat.mes-hall2025

Homogeneous doping of epitaxial graphene by Pb(111) islands: A magnetotransport study

Julian Koch, Sergii Sologub, Dorothee Sylvia Boesler +5

Proximity coupling is an effective approach for the functionalization of graphene. However, graphene's inertness inhibits the adsorption of closed films, thus favoring island growt…