56 citations · 261 across the 16 of their papers we have counts for
10 papers · 1 filter
Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing
Oliver Steuer, Daniel Schwarz, Michael Oehme +10
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability…
Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
Oliver Steuer, Michail Michailow, René Hübner +12
For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this allo…
Intrinsic magnetic properties of the layered antiferromagnet CrSBr
Fangchao Long, Kseniia Mosina, René Hübner +6
Van der Waals magnetic materials are an ideal platform to study low-dimensional magnetism. Opposed to other members of this family, the magnetic semiconductor CrSBr is highly resis…
Monovacancy paramagnetism in neutron-irradiated graphite probed by C NMR
Z. T. Zhang, C. Xu, D. Dmytriieva +6
We report on the magnetic properties of monovacancy defects in neutron-irradiated graphite, probed by C nuclear magnetic resonance spectroscopy. The bulk paramagnetism of th…
Defect-induced magnetism in SiC probed by nuclear magnetic resonance
Z. T. Zhang, D. Dmytriieva, S. Molatta +5
We give evidence for intrinsic, defect-induced bulk paramagnetism in SiC by means of C and Si nuclear magnetic resonance (NMR) spectroscopy. The temperature dependenc…
Suppressing the cellular breakdown in silicon supersaturated with titanium
Fang Liu, S Prucnal, R Hübner +4
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted S…
Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism
Shengqiang Zhou, Lin Li, Ye Yuan +11
For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resi…
High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
Y. Yuan, Y. Wang, K. Gao +9
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnx…
Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?
Shengqiang Zhou, K. Potzger, Qingyu Xu +7
Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation si…
Crystalline Ni nanoparticles as the origin of ferromagnetism in Ni implanted ZnO crystals
Shengqiang Zhou, K. Potzger, Gufei Zhang +4
We report the structural and magnetic properties of ZnO single crystals implanted at 623 K with up to 10 at. % of Ni. As revealed by X-ray diffraction, crystalline fcc-Ni nanoparti…