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A single-atom quantum memory in silicon
S. Freer, S. Simmons, A. Laucht +10
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for op…
Impact of g-factors and valleys on spin qubits in a silicon double quantum dot
J. C. C. Hwang, C. H. Yang, M. Veldhorst +6
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectru…
Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin
Arne Laucht, Stephanie Simmons, Rachpon Kalra +10
We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field is used to dress the el…
A Dressed Spin Qubit in Silicon
Arne Laucht, Rachpon Kalra, Stephanie Simmons +10
Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control,…