237 citations · 457 across the 12 of their papers we have counts for
9 papers · 1 filter
Hard x-ray photoemission study on strain effect in LaNiO thin films
K. Yamagami, K. Ikeda, A. Hariki +7
The strain effect from a substrate is an important experimental route to control electronic and magnetic properties in transition-metal oxide (TMO) thin films. Using hard x-ray pho…
Interfacial-hybridization-modified Ir Ferromagnetism and Electronic Structure in LaMnO/SrIrO Superlattices
Yujun Zhang, Yong Zheng Luo, Liang Wu +19
Artificially fabricated 3/5 superlattices (SLs) involve both strong electron correlation and spin-orbit coupling in one material by means of interfacial 3-5 coupling, w…
Photoemission and Dynamical Mean Field Theory Study of Electronic Correlation in a Metal of SrRhO Thin Film
Yujun Zhang, Minjae Kim, Jernej Mravlje +8
Perovskite rhodates are characterized by intermediate strengths of both electronic correlation as well as spin-orbit coupling (SOC) and usually behave as moderately correlated meta…
Interface reconstruction in V-oxide heterostructures determined by x-ray absorption spectroscopy
H. Wadati, D. G. Hawthorn, J. Geck +7
We present an x-ray absorption study of the dependence of the V oxidation state on the thickness of LaVO (LVO) and capping LaAlO (LAO) layers in the multilayer structure of…
Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
T. Higuchi, Y. Hotta, T. Susaki +2
We present evidence for hole injection into LaAlO3/LaVO3/LaAlO3 quantum wells near a polar surface of LaAlO3 (001). As the surface is brought in proximity to the LaVO3 layer, an ex…
Remote hole-doping of Mott insulators on the nanometer scale
M. Takizawa, Y. Hotta, T. Susaki +12
At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-dop…
Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
Y. Hotta, T. Susaki, H. Y. Hwang
We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2…
Hard x-ray photoemission study of LaAlO3/LaVO3 multilayers
H. Wadati, Y. Hotta, A. Fujimori +10
We have studied the electronic structure of multilayers composed of a band insulator LaAlO (LAO) and a Mott insulator LaVO (LVO) by means of hard x-ray photoemission spectr…
Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4
L. Fitting Kourkoutis, Y. Hotta, T. Susaki +2
Electrons at interfaces, driven to minimize their free energy, are distributed differently than in bulk. This can be dramatic at interfaces involving heterovalent compounds. Here w…