activity
20062017
most citedGate-induced insulating state in bilayer graphene devices

1.7k citations · 3.9k across the 11 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

11 papers · 1 filter

cond-mat.mes-hall2017★ 34 cited

Transport spectroscopy of induced superconductivity in the three-dimensional topological insulator HgTe

Jonas Wiedenmann, Eva Liebhaber, Johannes Kübert +6

The proximity-induced superconducting state in the 3-dimensional topological insulator HgTe has been studied using electronic transport of a normal metal-superconducting point cont…

cond-mat.mes-hall2015★ 15 cited

Phase-sensitive SQUIDs based on the 3D topological insulator HgTe

Luis Maier, Erwann Bocquillon, Manuel Grimm +6

Three-dimensional topological insulators represent a new class of materials in which transport is governed by Dirac surface states while the bulk remains insulating. Due to helical…

cond-mat.mes-hall2013★ 78 cited

Josephson supercurrent through the topological surface states of strained bulk HgTe

Jeroen B. Oostinga, Luis Maier, Peter Schueffelgen +6

Strained bulk HgTe is a three-dimensional topological insulator, whose surface electrons have a high mobility (30,000 cm^2/Vs), while its bulk is effectively free of mobile charge…

cond-mat.mes-hall2012★ 75 cited

Induced superconductivity in the three-dimensional topological insulator HgTe

Luis Maier, Jeroen B. Oostinga, Daniel Knott +7

A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we prese…

cond-mat.mes-hall2012★ 13 cited

Edge state transport through disordered graphene nanoribbons in the quantum Hall regime

Fabian Duerr, Jeroen B. Oostinga, Charles Gould +1

The presence of strong disorder in graphene nanoribbons yields low-mobility diffusive transport at high charge densities, whereas a transport gap occurs at low densities. Here, we…

cond-mat.mes-hall2011★ 283 cited

Gate-tuned normal and superconducting transport at the surface of a topological insulator

B. Sacepe, J. B. Oostinga, J. Li +4

Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originati…

cond-mat.mes-hall2010★ 93 cited

Magneto-transport through graphene nano-ribbons

Jeroen B. Oostinga, Benjamin Sacepe, Monica F. Craciun +1

We investigate magneto-transport through graphene nano-ribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an inc…

cond-mat.mes-hall2008★ 142 cited

Electrostatic confinement of electrons in graphene nano-ribbons

Xinglan Liu, Jeroen B. Oostinga, Alberto F. Morpurgo +1

Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined betw…

cond-mat.mes-hall2007★ 269 cited

Aharonov-Bohm effect in graphene

Saverio Russo, Jeroen B. Oostinga, Dominique Wehenkel +4

We investigate experimentally transport through ring-shaped devices etched in graphene and observe clear Aharonov-Bohm conductance oscillations. The temperature dependence of the o…

cond-mat.mes-hall2007★ 1.7k cited

Gate-induced insulating state in bilayer graphene devices

Jeroen B. Oostinga, Hubert B. Heersche, Xinglan Liu +2

The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in th…

cond-mat.mes-hall2006★ 1.2k cited

Bipolar supercurrent in graphene

Hubert B. Heersche, Pablo Jarillo-Herrero, Jeroen B. Oostinga +2

Graphene -a recently discovered one-atom-thick layer of graphite- constitutes a new model system in condensed matter physics, because it is the first material in which charge carri…