Gate-induced insulating state in bilayer graphene devices

Abstract

The potential of graphene-based materials consisting of one or a few layers of graphite for integrated electronics originates from the large room-temperature carrier mobility in these systems (approx. 10,000 cm2/Vs). However, the realization of electronic devices such as field-effect transistors will require controlling and even switching off the electrical conductivity by means of gate electrodes, which is made difficult by the absence of a bandgap in the intrinsic material. Here, we demonstrate the controlled induction of an insulating state - with large suppression of the conductivity - in bilayer graphene, by using a double-gate device configuration that allows an electric field to be applied perpendicular to the plane. The dependence of the resistance on temperature and electric field, and the absence of any effect in a single-layer device, strongly suggest that the gate-induced insulating state originates from the recently predicted opening of a bandgap between valence and conduction bands.

17 pages, 5 figures

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Making graphene visible
• Transport measurements across a tunable potential barrier in graphene
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Visibility of graphene flakes on a dielectric substrate

Cited by in corpus (14)

• Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
• Electronic properties of bilayer and multilayer graphene
• Metal to insulator transition in epitaxial graphene induced by molecular doping
• Shot Noise in Ballistic Graphene
• Tuning the gap in bilyaer graphene using chemical functionalization: DFT calculations
• Conductance of p-n-p graphene structures with 'air-bridge' top gates
• Boltzmann transport and residual conductivity in bilayer graphene
• Low density ferromagnetism in biased bilayer graphene
• Inducing energy gaps in graphene monolayer and bilayer
• Inter-Layer Screening Length to Electric Field in Thin Graphite Film
• Exciton formation in graphene bilayer
• Transfer Characteristics in Graphene Field-Effect Transistors with Co Contacts
• Kekule-distortion-induced Exciton instability in graphene
• First order ferromagnetic phase transition in the low electronic density regime of a biased graphene bilayer