activity
20062017
most citedGate-induced insulating state in bilayer graphene devices

1.7k citations · 3.9k across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2017★ 34 cited

Transport spectroscopy of induced superconductivity in the three-dimensional topological insulator HgTe

Jonas Wiedenmann, Eva Liebhaber, Johannes Kübert +6

The proximity-induced superconducting state in the 3-dimensional topological insulator HgTe has been studied using electronic transport of a normal metal-superconducting point cont…

cond-mat.mes-hall2015★ 15 cited

Phase-sensitive SQUIDs based on the 3D topological insulator HgTe

Luis Maier, Erwann Bocquillon, Manuel Grimm +6

Three-dimensional topological insulators represent a new class of materials in which transport is governed by Dirac surface states while the bulk remains insulating. Due to helical…

cond-mat.mes-hall2013★ 78 cited

Josephson supercurrent through the topological surface states of strained bulk HgTe

Jeroen B. Oostinga, Luis Maier, Peter Schueffelgen +6

Strained bulk HgTe is a three-dimensional topological insulator, whose surface electrons have a high mobility (30,000 cm^2/Vs), while its bulk is effectively free of mobile charge…

cond-mat.mes-hall2012★ 75 cited

Induced superconductivity in the three-dimensional topological insulator HgTe

Luis Maier, Jeroen B. Oostinga, Daniel Knott +7

A strained and undoped HgTe layer is a three-dimensional topological insulator, in which electronic transport occurs dominantly through its surface states. In this Letter, we prese…

cond-mat.mes-hall2012★ 13 cited

Edge state transport through disordered graphene nanoribbons in the quantum Hall regime

Fabian Duerr, Jeroen B. Oostinga, Charles Gould +1

The presence of strong disorder in graphene nanoribbons yields low-mobility diffusive transport at high charge densities, whereas a transport gap occurs at low densities. Here, we…

cond-mat.mes-hall2011★ 283 cited

Gate-tuned normal and superconducting transport at the surface of a topological insulator

B. Sacepe, J. B. Oostinga, J. Li +4

Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originati…