Blocking transition of interface traps in MoS${}_2$-on-SiO${}_2$ FETs

Santu Prasad Jana, Suraina Gupta, Anjan K. Gupta

Electrical conductivity with gate-sweep in a few layer MoS${}_2$-on-SiO${}_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time depen…