9 citations · 13 across the 7 of their papers we have counts for
7 papers
Superinsulating behavior in granular Pb film on gated few-layer MoS
Suraina Gupta, Santu Prasad Jana, Pawan Kumar Gupta +1
We report a super-insulating behavior, in a device having granular Pb film on back-gated few-layer , below an onset temperature same as the critical temperature $T_…
Blocking transition of SrTiO surface dipoles in MoS/SrTiO field effect transistors with counterclockwise hysteresis
Santu Prasad Jana, S Sreesanker, Suraina Gupta +1
A counterclockwise hysteresis is observed at room temperature in the transfer characteristics of SrTiO (STO) gated MoS field effect transistor (FET) and attributed to bista…
Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS on SiO
Santu Prasad Jana, Suraina Gupta, Anjan Kumar Gupta
Randomly distributed traps at the MoS/SiO interface result in non-ideal transport behavior, including hysteresis in MoS/SiO field effect transistors (FETs). Thus tr…
Superconductor to metal quantum phase transition with magnetic field in Josephson coupled lead islands on Graphene
Suraina Gupta, Santu Prasad Jana, Rukshana Pervin +1
Superconductor-to-metal transition with magnetic field and gate-voltage is studied in a Josephson junction array comprising of randomly distributed lead islands on exfoliated singl…
Enhanced performance of MoS/SiO field-effect transistors by hexamethyldisilazane (HMDS) encapsulation
Santu Prasad Jana, Shivangi, Suraina Gupta +1
Scalable methods for improving the performance and stability of a field-effect transistor (FET) based on two-dimensional materials are crucial for its real applications. A scalable…
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Suraina Gupta, Santu Prasad Jana, Rukshana Pervin +1
Resistance of a Josephson junction array consisting of randomly distributed lead (Pb) islands on exfoliated single layer graphene shows a broad superconducting transition to zero w…
Blocking transition of interface traps in MoS-on-SiO FETs
Santu Prasad Jana, Suraina Gupta, Anjan K. Gupta
Electrical conductivity with gate-sweep in a few layer MoS-on-SiO field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time depen…