Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS${}_2$ on SiO${}_2$

Santu Prasad Jana, Suraina Gupta, Anjan Kumar Gupta

Randomly distributed traps at the MoS${}_2$/SiO${}_2$ interface result in non-ideal transport behavior, including hysteresis in MoS${}_2$/SiO${}_2$ field effect transistors (FETs). Thus tr…