31 citations · 110 across the 21 of their papers we have counts for
23 papers
Realization of ZnSe-based Field-Effect Transistors operating at Cryogenic Temperatures as a Platform for Future Spin-Qubit Applications
Christine Falter, Yurii Kutovyi, Nils von den Driesch +12
The wide-bandgap compound semiconductor ZnSe is a promising host material for the realization of electron spin-qubits. Its non-degenerate conduction band and the potential for isot…
Valley-Enabled Intrinsic Dresselhaus Spin-Orbit Coupling in Silicon
Johannes L. P. Steinschuld, Hendrik J. Bluhm, Lars R. Schreiber +1
We develop a symmetry-based theory of spin-orbit-valley coupling in silicon that reveals an intrinsic source of Dresselhaus spin-orbit coupling independent of interfaces or externa…
Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe
Alexander Willmes, Max Oberländer, Max Beer +7
In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synth…
Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector in nuclear spin-free Si quantum wells
Ivo Rahlff, Carsten Richter, Martin Schmidbauer +13
Periodic Ge modulations within strained Si quantum wells in SiGe heterostructures offer a route to deterministically enhance conduction-band valley splitting in Si, a key requireme…
Singlet-triplet oscillations in multivalley Si double quantum dots
Łukasz Cywiński, Mats Volmer, Tom Struck +2
Charge separation from the to the state in a Si/SiGe double quantum dot is commonly used for initialization of spin qubits and Pauli-spin-blockade readout. It was u…
Mapping g-factors and complex intervalley coupling in Si/SiGe by conveyor-mode shuttling
Mats Volmer, Tom Struck, Arnau Sala +7
As silicon spin qubit chips are increasing in qubit number and area, methods for the screening of qubit related material parameters become vital. Here we demonstrate the two-dimens…
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
Max Beer, Ran Xue, Lennart Deda +6
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…
Numerical simulation of coherent spin-shuttling in a QuBus with charged defects
Nils Ciroth, Arnau Sala, Ran Xue +4
Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttle…
Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
Abel Thayil, Lasse Ermoneit, Lars R. Schreiber +2
Small and device-dependent valley splittings remain a key challenge for electron spin qubits in silicon (Si), directly limiting qubit fidelity, device uniformity, and the scalabili…
Impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in Si/SiGe
Mats Volmer, Tom Struck, Jhih-Sian Tu +6
Silicon quantum chips offer a promising path toward scalable, fault-tolerant quantum computing, with the potential to host millions of qubits. However, scaling up dense quantum-dot…
Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
Lucas Marcogliese, Ouviyan Sabapathy, Rudolf Richter +3
Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from furthe…
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…
Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
Till Huckemann, Pascal Muster, Wolfram Langheinrich +12
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon…
Long distance spin shuttling enabled by few-parameter velocity optimization
Alessandro David, Akshay Menon Pazhedath, Lars R. Schreiber +3
Spin qubit shuttling via moving conveyor-mode quantum dots in Si/SiGe offers a promising route to scalable miniaturized quantum computing. Recent modeling of dephasing via valley d…
Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures
Jan Tröger, Reinhard Kersting, Birgit Hagenhoff +5
The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructu…
Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Jan Klos, Jan Tröger, Jens Keutgen +10
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homo…
Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots
Julian Ferrero, Thomas Koch, Sonja Vogel +7
Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still wide…
Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
Merritt P. Losert, Max Oberländer, Julian D. Teske +5
Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently trans…
Scalable Parity Architecture With a Shuttling-Based Spin Qubit Processor
Florian Ginzel, Michael Fellner, Christian Ertler +3
Motivated by the prospect of a two-dimensional square-lattice geometry for semiconductor spin qubits, we explore the realization of the Parity Architecture with quantum dots (QDs).…
Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling
Mats Volmer, Tom Struck, Arnau Sala +10
In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local…
Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
Malte Neul, Isabelle V. Sprave, Laura K. Diebel +6
Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as…
Triggering and probing of phase-coherent spin packets by time-resolved spin transport across an Fe/GaAs Schottky barrier
L. R. Schreiber, C. Schwark, S. Richter +7
Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets…
Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs
H. C. Schneider, J. -P. Wuestenberg, O. Andreyev +7
Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with…