13 citations · 28 across the 15 of their papers we have counts for
6 papers · 1 filter
Valley-Enabled Intrinsic Dresselhaus Spin-Orbit Coupling in Silicon
Johannes L. P. Steinschuld, Hendrik J. Bluhm, Lars R. Schreiber +1
We develop a symmetry-based theory of spin-orbit-valley coupling in silicon that reveals an intrinsic source of Dresselhaus spin-orbit coupling independent of interfaces or externa…
Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe
Alexander Willmes, Max Oberländer, Max Beer +7
In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synth…
Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector in nuclear spin-free Si quantum wells
Ivo Rahlff, Carsten Richter, Martin Schmidbauer +13
Periodic Ge modulations within strained Si quantum wells in SiGe heterostructures offer a route to deterministically enhance conduction-band valley splitting in Si, a key requireme…
Singlet-triplet oscillations in multivalley Si double quantum dots
Łukasz Cywiński, Mats Volmer, Tom Struck +2
Charge separation from the to the state in a Si/SiGe double quantum dot is commonly used for initialization of spin qubits and Pauli-spin-blockade readout. It was u…
Mapping g-factors and complex intervalley coupling in Si/SiGe by conveyor-mode shuttling
Mats Volmer, Tom Struck, Arnau Sala +7
As silicon spin qubit chips are increasing in qubit number and area, methods for the screening of qubit related material parameters become vital. Here we demonstrate the two-dimens…
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
Max Beer, Ran Xue, Lennart Deda +6
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…