31 citations · 110 across the 21 of their papers we have counts for
11 papers · 1 filter
Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe
Alexander Willmes, Max Oberländer, Max Beer +7
In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synth…
Singlet-triplet oscillations in multivalley Si double quantum dots
Łukasz Cywiński, Mats Volmer, Tom Struck +2
Charge separation from the to the state in a Si/SiGe double quantum dot is commonly used for initialization of spin qubits and Pauli-spin-blockade readout. It was u…
Conveyor-mode electron shuttling through a T-junction in Si/SiGe
Max Beer, Ran Xue, Lennart Deda +6
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns w…
Numerical simulation of coherent spin-shuttling in a QuBus with charged defects
Nils Ciroth, Arnau Sala, Ran Xue +4
Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttle…
Optimization of Si/SiGe Heterostructures for Large and Robust Valley Splitting in Silicon Qubits
Abel Thayil, Lasse Ermoneit, Lars R. Schreiber +2
Small and device-dependent valley splittings remain a key challenge for electron spin qubits in silicon (Si), directly limiting qubit fidelity, device uniformity, and the scalabili…
Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
Lucas Marcogliese, Ouviyan Sabapathy, Rudolf Richter +3
Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from furthe…
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…
Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
Till Huckemann, Pascal Muster, Wolfram Langheinrich +12
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon…
Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Jan Klos, Jan Tröger, Jens Keutgen +10
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homo…
Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots
Julian Ferrero, Thomas Koch, Sonja Vogel +7
Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still wide…
Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
Merritt P. Losert, Max Oberländer, Julian D. Teske +5
Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently trans…