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researcher

L. Schreiber

23 papers hereh-index 9229 citations37 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author13
  • last author7

Across the 21 of 23 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall11
  • quant-ph5
  • cond-mat.mtrl-sci4
  • physics.app-ph3
same name
  • L. Schreiber — 23 papers, h 17
  • L. Schreiber — 12 papers, h 15
  • L. Schreiber — 6 papers, h 3
  • L. Schreiber — 2 papers, h 21
  • L. Schreiber — 1 paper, h 2

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20052026
most citedMapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

31 citations · 110 across the 21 of their papers we have counts for

collaborators
Showing physics.app-phShow all

3 papers · 1 filter

physics.app-ph2026

Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector k0​ in nuclear spin-free Si quantum wells

Ivo Rahlff, Carsten Richter, Martin Schmidbauer +13

Periodic Ge modulations within strained Si quantum wells in SiGe heterostructures offer a route to deterministically enhance conduction-band valley splitting in Si, a key requireme…

physics.app-ph2024

Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures

Jan Tröger, Reinhard Kersting, Birgit Hagenhoff +5

The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructu…

physics.app-ph2023★ 8 cited

Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

Malte Neul, Isabelle V. Sprave, Laura K. Diebel +6

Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as…

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