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20072026
most citedHysteresis in the transfer characteristics of MoS2 transistors

306 citations · 1.7k across the 41 of their papers we have counts for

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cond-mat.mes-hall2023★ 9 cited

Isolating the Nonlinear Optical Response of a MoS Monolayer under Extreme Screening of a Metal Substrate

Tao Yang, Stephan Sleziona, Erik Pollmann +5

Transition metal dichalcogenides (TMDCs) monolayers, as two-dimensional (2D) direct bandgap semiconductors, hold promise for advanced optoelectronic and photocatalytic devices. Int…

cond-mat.mes-hall2023★ 106 cited

Gas dependent hysteresis in MoS field effect transistors

F. Urban, F. Giubileo, A. Grillo +10

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistor…

cond-mat.mes-hall2021

Memory effects in black phosphorus field effect transistors

Alessandro Grillo, Aniello Pelella, Enver Faella +5

We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer char…

cond-mat.mes-hall2018

Tunable quantum interference in bilayer graphene in double-resonant Raman scattering

Felix Herziger, Christoph Tyborski, Oliver Ochedowski +2

The line shape of the double-resonant Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimen…

cond-mat.mes-hall2017★ 306 cited

Hysteresis in the transfer characteristics of MoS2 transistors

Antonio Di Bartolomeo, Luca Genovese, Filippo Giubileo +4

We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hyster…

cond-mat.mes-hall2017★ 251 cited

Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors

Antonio Di Bartolomeo, Luca Genovese, Tobias Foller +6

We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensitie…