520 citations · 907 across the 10 of their papers we have counts for
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Relativistic Neel-order fields induced by electrical current in antiferromagnets
J. Zelezny, H. Gao, K. Vyborny +6
We predict that a lateral electrical current in antiferromagnets can induce non-equilibrium Néel order fields, i.e. fields whose sign alternates between the spin sublattices, which…
Comparative study of tight-binding and ab initio electronic structure calculations focused on magnetic anisotropy in ordered CoPt alloy
J. Zemen, J. Mašek, J. Kučera +3
An empirical multiorbital (spd) tight binding (TB) model including magnetism and spin-orbit coupling is applied to calculations of magnetic anisotropy energy (MAE) in CoPt L1_0 str…
Experimental observation of the optical spin-orbit torque
N. Tesarova, P. Nemec, E. Rozkotova +6
Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the…
Experimental observation of the optical spin transfer torque
P. Nemec, E. Rozkotova, N. Tesarova +8
The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has…
Non-thermal laser induced precession of magnetization in ferromagnetic semiconductor (Ga,Mn)As
P. Nemec, E. Rozkotova, N. Tesarova +7
Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultr…
Strain control of magnetic anisotropy in (Ga,Mn)As microbars
C. King, J. Zemen, K. Olejník +8
We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive la…
Low voltage control of ferromagnetism in a semiconductor p-n junction
M. H. S. Owen, J. Wunderlich, V. Novak +8
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current infor…
Domain walls in (Ga,Mn)As diluted magnetic semiconductor
Akira Sugawara, H. Kasai, A. Tonomura +6
We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron…
Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
A. W. Rushforth, E. De Ranieri, J. Zemen +10
We demonstrate dynamic voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large…