activity
20062025
most citedExcitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics

677 citations · 955 across the 18 of their papers we have counts for

collaborators

18 papers

cond-mat.mtrl-sci2025

Thermal assisted transport of biexcitons in monolayer WSe2

Dorian Béret, Louka Hemmen, Vishwas Jindal +9

Studies of excitonic transport in transition metal dichalcogenide monolayers have attracted increasing interest in recent years in order to develop nano-optoelectronic devices made…

cond-mat.other2021★ 2 cited

Machine learning assisted GaAsN circular polarimeter

A. Aguirre-Perez, R. S. Joshya, H. Carrère +4

We demonstrate the application of a two stage machine learning algorithm that enables to correlate the electrical signals from a GaAsN circular polarimeter with the int…

physics.app-ph2021★ 14 cited

Chiral photodetector based on GaAsN

R. S. Joshya, H. Carrère, V. G. Ibarra-Sierra +7

The detection of light helicity is key to several research and industrial applications from drugs production to optical communications. However, the direct measurement of the light…

cond-mat.mes-hall2021★ 5 cited

Polarization sensitive photodectector based on GaAsN

V. G. Ibarra-Sierra, J. C. Sandoval-Santana, R. S. Joshya +8

We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows to electrically measure the degree of circular polarization and light intensity at roo…

physics.app-ph2020★ 6 cited

Electrical Detection of Light Helicity using a Quantum Dots based Hybrid Device at Zero Magnetic Field

Fabian Cadiz, Delphine Lagarde, Bingshan Tao +13

Photon helicity-dependent photocurrent is measured at zero magnetic field on a device based on an ensemble of InGaAs/GaAs quantum dots that are embedded into a GaAs-based p-i-n dio…

cond-mat.mes-hall2019★ 5 cited

Electron-nucleus spin correlation conservation of the spin dependent recombination in Ga centers

J. C. Sandoval-Santana, V. G. Ibarra-Sierra, H. Carrère +7

Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band ele…