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20062025
most citedExcitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics

677 citations · 955 across the 18 of their papers we have counts for

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cond-mat.mtrl-sci2025

Thermal assisted transport of biexcitons in monolayer WSe2

Dorian Béret, Louka Hemmen, Vishwas Jindal +9

Studies of excitonic transport in transition metal dichalcogenide monolayers have attracted increasing interest in recent years in order to develop nano-optoelectronic devices made…

cond-mat.mtrl-sci2017★ 677 cited

Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics

F. Cadiz, E. Courtade, C. Robert +13

The strong light matter interaction and the valley selective optical selection rules make monolayer (ML) MoS2 an exciting 2D material for fundamental physics and optoelectronics ap…

cond-mat.mtrl-sci2016★ 9 cited

Spin and recombination dynamics of excitons and free electrons in p-type GaAs : effect of carrier density

F. Cadiz, D. Lagarde, P. Renucci +5

Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At l…

cond-mat.mtrl-sci2014★ 33 cited

Investigation of the anisotropic electron g factor as a probe of the electronic structure of GaBiAs/GaAs epilayers

Christopher A. Broderick, Simone Mazzucato, Hélène Carrère +9

The electron Landé g factor () is investigated both experimentally and theoretically in a series of GaBiAs/GaAs strained epitaxial layers, for bismuth composit…

cond-mat.mtrl-sci2013★ 17 cited

Fabrication of an InGaAs spin filter by implantation of paramagnetic centers

C. T. Nguyen, A. Balocchi, D. Lagarde +6

We report on the selective creation of spin filltering regions in non-magnetic InGaAs layers by implantation of Ga ions by Focused Ion Beam. We demonstrate by photoluminescence spe…