activity
20062026
most citedExcitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics

677 citations · 5k across the 48 of their papers we have counts for

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24 papers · 1 filter

cond-mat.mtrl-sci2025

Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials

Jules Fraunié, Mikhail M. Glazov, Sébastien Roux +13

Boron vacancies () in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity.…

cond-mat.mtrl-sci2025

Thermal assisted transport of biexcitons in monolayer WSe2

Dorian Béret, Louka Hemmen, Vishwas Jindal +9

Studies of excitonic transport in transition metal dichalcogenide monolayers have attracted increasing interest in recent years in order to develop nano-optoelectronic devices made…

cond-mat.mtrl-sci2025

Charge state tuning of spin defects in hexagonal boron nitride

Jules Fraunié, Tristan Clua-Provost, Sébastien Roux +14

Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to…

cond-mat.mtrl-sci2024

Using Light to Polarize and Detect Electron Spins in Silicon

Xavier Marie, Delphine Lagarde, Andrea Balocchi +5

Despite decades of research, demonstration of all-optical detection and control of free electron spins in silicon remains elusive. Here, we directly probe the electron spin propert…

cond-mat.mtrl-sci2022★ 1 cited

Non-linear diffusion of negatively charged excitons in WSe2 monolayer

D. Beret, L. Ren, C. Robert +10

We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial p…

cond-mat.mtrl-sci2022★ 37 cited

Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride

Dorian Beret, Ioannis Paradisanos, Ziyang Gan +17

Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier…