Measurement of Conduction and Valence Bands g-factors in a Transition Metal Dichalcogenide Monolayer
arXiv:2008.07464 · doi:10.1103/PhysRevLett.126.067403
Abstract
The electron valley and spin degree of freedom in monolayer transition-metal dichalcogenides can be manipulated in optical and transport measurements performed in magnetic fields. The key parameter for determining the Zeeman splitting, namely the separate contribution of the electron and hole g-factor, is inaccessible in most measurements. Here we present an original method that gives access to the respective contribution of the conduction and valence band to the measured Zeeman splitting. It exploits the optical selection rules of exciton complexes, in particular the ones involving inter-valley phonons, avoiding strong renormalization effects that compromise single particle g-factor determination in transport experiments. These studies yield a direct determination of single band g factors. We measure gc1= 0.86, gc2=3.84 for the bottom (top) conduction bands and gv=6.1 for the valence band of monolayer WSe2. These measurements are helpful for quantitative interpretation of optical and transport measurements performed in magnetic fields. In addition the measured g-factors are valuable input parameters for optimizing band structure calculations of these 2D materials.
References in corpus (21)
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Magnetic Control of Valley Pseudospin in Monolayer WSe2
- Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
- Breaking of valley degeneracy by magnetic field in monolayer MoSe2
- Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
- Robust optical emission polarization in MoS2 monolayers through selective valley excitation
- Many-Body Theory of Trion Absorption Features in Two-Dimensional Semiconductors
- Valley-spin polarized Landau levels in a monolayer semiconductor
- Valley Phonons and Exciton Complexes in a Monolayer Semiconductor
- Magneto-optics in transition metal diselenide monolayers
- Direct Determination of Band Gap Renormalization in Photo-Excited Monolayer MoS2
- Exciton g-factors of van der Waals heterostructures from first principles calculations
- Optical investigation of monolayer and bulk tungsten diselenide (WSe) in high magnetic fields
- Optical properties of charged excitons in two-dimensional semiconductors
- Ab-initio studies of exciton factors: Monolayer transition metal dichalcogenides in magnetic fields
- Exciton g-factors in monolayer and bilayer WSe from experiment and theory
- Valley Zeeman effect and Landau levels in Two-Dimensional Transition Metal Dichalcogenides
- Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs
- Temperature dependence of the electron spin g factor in GaAs
- Landau-quantized excitonic absorption and luminescence in a monolayer valley semiconductor
- Intervalley Polaron in Atomically Thin Transition Metal Dichalcogenides
Cited by in corpus (31)
- Excitonic complexes in -doped WS monolayer
- Hexcitons and oxcitons in monolayer WSe
- Chiral Kondo Lattice in Doped MoTe/WSe Bilayers
- Magnetooptics of layered two-dimensional semiconductors and heterostructures: progress and prospects
- Relaxation and darkening of excitonic complexes in electrostatically-doped monolayer semiconductors: Roles of exciton-electron and trion-electron interactions
- Many-body exciton and inter-valley correlations in heavily electron-doped WSe monolayers
- Signatures of electric field and layer separation effects on the spin-valley physics of MoSe/WSe heterobilayers: from energy bands to dipolar excitons
- Valley-Filling Instability and Critical Magnetic Field for Interaction-Enhanced Zeeman Response in Doped WSe Monolayers
- Optical detection of long electron spin transport lengths in a monolayer semiconductor
- Excitons and trions in monolayer semiconductors with correlated electrons
- Intervalley electron-hole exchange interaction and impurity-assisted recombination of indirect excitons in WS and WSe monolayers
- Hofstadter spectrum of Chern bands in twisted transition metal dichalcogenides
- Interplay of valley polarized dark trion and dark exciton-polaron in monolayer WSe2
- Chiral Flat-Band Optical Cavity with Atomically Thin Mirrors
- Magnetically tunable exciton valley coherence in monolayer WS mediated by the electron-hole exchange and exciton-phonon interactions
- Proximity-enhanced valley Zeeman splitting at the WS/graphene interface
- Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides
- Two dimensional semiconductors: optical and electronic properties
- Ten-valley excitonic complexes in charge-tunable monolayer WSe
- Magneto-Optical Measurements of the Negatively Charged 2 Exciton in WSe
- Multidimensional sensing of proximity magnetic fields via intrinsic activation of dark excitons in WSe/CrCl heterostructure
- Landau-level composition of bound exciton states in magnetic field
- Exchange-enhanced spin-orbit splitting and its density dependence for electrons in monolayer transition metal dichalcogenides
- Spin-deformation coupling in two-dimensional polar materials
- Spin/Valley pumping of resident electrons in WSe2 and WS2 monolayers
- Orbital Magnetization of Correlated States in Twisted Bilayer Transition Metal Dichalcogenides
- Energy shifts and broadening of excitonic resonances in electrostatically-doped semiconductors
- Extremely high excitonic -factors in 2D crystals by alloy-induced admixing of band states
- Rydberg series of intralayer K-excitons in WSe multilayers
- Efficient valley polarization of charged excitons and resident carriers in MoS2 monolayers by optical pumping
- Ellipticity-Controlled Bright-Dark Coherence Transition in Monolayer WSe2