H. Xing

activity

20132026

most citedGraphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

92 citations · 205 across the 27 of their papers we have counts for

collaborators

Showing 2023Show all

3 papers · 1 filter

physics.app-ph2023

Accumulation and removal of Si impurities on $β - G a_{2} O_{3}$ arising from ambient air exposure

J. P. McCandless, C. A. Gorsak, V. Protasenko +5

Here we report that the source of Si impurities commonly observed on (010) $β - G a_{2} O_{3}$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment…

cond-mat.mtrl-sci2023

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time

K. R. Gann, N. Pieczulewski1, C. A. Gorsak +9

Optimizing thermal anneals of Si-implanted $β$ -Ga $_{2}$ O $_{3}$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature…

physics.app-ph2023★ 44 cited

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

J. Casamento, K. Nomoto, T. S. Nguyen +11

We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…

Accumulation and removal of Si impurities on β−Ga2​O3​ arising from ambient air exposure

Silicon Implantation and Annealing in β-Ga2​O3​: Role of Ambient, Temperature, and Time

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

Accumulation and removal of Si impurities on $β - G a_{2} O_{3}$ arising from ambient air exposure

Silicon Implantation and Annealing in $β$ -Ga $_{2}$ O $_{3}$ : Role of Ambient, Temperature, and Time