92 citations · 205 across the 27 of their papers we have counts for
13 papers · 1 filter
Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN
Shivali Agrawal, Hsin-Wei S. Huang, Debaditya Bhattacharya +6
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm, 5 orders of on/off ratio, and low diff…
Low Resistance Non-Alloyed Ohmic Contacts to High Al Composition n-type AlGaN
Joseph E. Dill, Xianzhi Wei, Changkai Yu +6
Ohmic contacts to high (>70\%) Al content n-type AlGaN ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a…
Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire
Anand Ithepalli, Saumya Vashishtha, Naomi Pieczulewski +7
We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of , $2^…
High Mobility Multiple-Channel AlScN/GaN Heterostructures
Aias Asteris, Thai-Son Nguyen, Chuan F. C. Chang +4
Aluminum scandium nitride (AlScN) is a promising barrier material for gallium nitride (GaN)-based transistors for the next generation of radio-frequency electronic devices. In this…
A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors
Aias Asteris, Thai-Son Nguyen, Huili Grace Xing +1
A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially…
Lorentzian Switching Dynamics in HZO-based FeMEMS Synapses for Neuromorphic Weight Storage
Shubham Jadhav, Kaustav Roy, Luis Amaro +6
Neuromorphic computing demands synaptic elements that can store and update weights with high precision while being read non-destructively. Conventional ferroelectric synapses store…
Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
H-W S. Huang, S. Agrawal, D. Bhattacharya +2
Better wall plug efficiency of deep-ultraviolet light emitting diodes (DUV-LEDs) requires simultaneous low resistivity p-type and n-type contacts, which is a challenging problem. I…
Generalized quantum limits of electrical contact resistance and thermal boundary resistance
Alice Ho, Jashan Singhal, Deji Akinwande +2
The importance of electrical contact resistance and thermal boundary resistance has increased dramatically as devices are scaled to atomic limits. The use of a rich range of materi…
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…
Epitaxial high-K AlBN barrier GaN HEMTs
Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto +8
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize u…
Growth and characterization of single crystal cubic TaN and hexagonal TaN films on c-plane Sapphire
Anand Ithepalli, Amit Rohan Rajapurohita, Arjan Singh +7
Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be -TaN with a rocksalt cubic struc…
Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
Yu-Hsin Chen, Jimy Encomendero, Huili Grace Xing +1
We report the observation of Shubnikov-de Haas (SdH) oscillations in coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including both undoped and -doped stru…
Quantum oscillations of holes in GaN
Chuan F. C. Chang, Joseph E. Dill, Zexuan Zhang +12
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radi…