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20002026
most citedIntrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

3.2k citations · 15.4k across the 107 of their papers we have counts for

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Showing 2022Show all

5 papers · 1 filter

cond-mat.mes-hall2022

Visualization of Strain-Induced Landau Levels in a Graphene - Black Phosphorus Heterostructure

Thi-Hai-Yen Vu, Pin Lyu, Na Hyun Jo +8

Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promis…

cond-mat.mes-hall2022

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

Yi-Hsun Chen, Kaijian Xing, Song Liu +10

1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technolo…

cond-mat.mes-hall2022★ 27 cited

Mechanically transferred large-area GaO passivates graphene and suppresses interfacial phonon scattering

Matthew Gebert, Semonti Bhattacharyya, Christopher C Bounds +3

We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous GaO synthesized on liquid Ga metal. A comparison of temperature-dep…

cond-mat.mtrl-sci2022

Increased Phase Coherence Length in a Porous Topological Insulator

Alex Nguyen, Golrokh Akhgar, David L. Cortie +11

The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as…

cond-mat.mes-hall2022

Robust Subthermionic Topological Transistor Action via Antiferromagnetic Exchange

Sagnik Banerjee, Koustav Jana, Anirban Basak +3

The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-stat…