activity
20002026
most citedIntrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

3.2k citations · 15.4k across the 107 of their papers we have counts for

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Showing 2023Show all

11 papers · 1 filter

cond-mat.mtrl-sci2023★ 16 cited

Designing optoelectronic properties by on-surface synthesis: formation and electronic structure of an iron-terpyridine macromolecular complex

Agustin Schiffrin, Martina Capsoni, Gelareh Farahi +10

Supramolecular chemistry protocols applied on surfaces offer compelling avenues for atomic scale control over organic-inorganic interface structures. In this approach, adsorbate-su…

cond-mat.mtrl-sci2023★ 2 cited

Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation

Qianhui Zhang, Jianfeng Lu, Ziyu Wang +7

Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold great potential for future low-energy optoelectronics owing to their unique electronic, optical, and mechanical pr…

physics.app-ph2023

A volatile polymer stamp for large-scale, etching-free, and ultraclean transfer and assembly of two-dimensional materials and its heterostructures

Zhigao Dai, Yupeng Wang, Lu Liu +10

The intact transfer and assembly of two-dimensional (2D) materials and their heterostructures are critical for their integration into advanced electronic and optical devices. Herei…

cond-mat.mes-hall2023★ 8 cited

Observation of large intrinsic anomalous Hall conductivity in polycrystalline MnSn films

W. AfzaL, Z. Yue, Z. Li +2

We report the observation of anomalous Hall effect in MnSn polycrystalline thin films deposited on Pt coated AlO substrate with a large anomalous Hall conductivity of 6…

cond-mat.mtrl-sci2023

Magneto-transport and electronic structures in MoSi bulks and thin films with different orientations

W. Afzal, F. Yun, Z. Li +8

We report a comprehensive study of magneto-transport properties in MoSi bulk and thin films. Textured MoSi thin films of around 70 nm were deposited on silicon substrates w…

cond-mat.mtrl-sci2023★ 9 cited

Defects, band bending and ionization rings in MoS2

Iolanda Di Bernardo, James Blyth, Liam Watson +5

Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in…