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High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture
Fuyou Liao, Zhongxun Guo, Yin Wang +13
In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG stru…
Electronic bandstructure of in-plane ferroelectric van der Waals
James L. Collins, Chutian Wang, Anton Tadich +11
Layered indium selenides () have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the and ' phases, respectively. In this…
Disentangling the effects of doping, strain and defects in monolayer WS2 by optical spectroscopy
Pavel V. Kolesnichenko, Qianhui Zhang, Changxi Zheng +2
Monolayers of transition metal dichalcogenides (TMdC) are promising candidates for realization of a new generation of optoelectronic devices. The optical properties of these two-di…
Oxidation of Monolayer WS in Ambient is a Photoinduced Process
Jimmy C. Kotsakidis, Quianhui Zhang, Amadeo L. Vazquez de Parga +4
We have studied the ambient air oxidation of chemical vapor deposition (CVD) grown monolayers of the semiconducting transition metal dichalcogenide (S-TMD) WS using optical m…
Quantum Oscillations of Robust Topological Surface States up to 50 K in Thick Bulk-insulating Topological Insulator
Weiyao Zhao, Lei Chen, Zengji Yue +4
As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly b…
Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi
Chang Liu, Dimitrie Culcer, Mark T. Edmonds +1
A two-dimensional topological insulator (2DTI) has an insulating bulk and helical spin-polarised edge modes robust to backscattering by non-magnetic disorder. While ballistic trans…