11 citations · 22 across the 6 of their papers we have counts for
5 papers · 1 filter
Single shot measurement of a silicon single electron transistor
D. G. Hasko, T. Ferrus, Q. R. Morrissey +8
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temp…
Variation of the hopping exponent in disordered silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was…
Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the…
Activation mechanisms in sodium-doped Silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the pres…
Evidence for multiple impurity bands in sodium-doped silicon MOSFETs
T. Ferrus, R. George, C. H. W. Barnes +3
We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer.…