most citedSingle shot measurement of a silicon single electron transistor

11 citations · 22 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.str-el200811 cited

Single shot measurement of a silicon single electron transistor

D. G. Hasko, T. Ferrus, Q. R. Morrissey +8

We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temp…

cond-mat.mes-hall20075 cited

Study and characterization by magnetophonon resonance of the energy structuring in GaAs/AlAs quantum-wire superlattices

T. Ferrus, B. Goutiers, L. Ressier +4

We present the characterization of the band structure of GaAs/AlAs quantum-wire 1D superlattices performed by magnetophonon resonance with pulsed magnetic fields up to 35 T. The sa…

cond-mat.mes-hall2007

Broadening processes in GaAs delta-doped quantum wire superlattices

T. Ferrus, B. Goutiers, J. Galibert +1

We use both Quantum Hall and Shubnikov de Haas experiments at high magnetic field and low temperature to analyse broadening processes of Landau levels in a delta-doped 2D quantum w…

cond-mat.dis-nn20072 cited

Optimized minigaps for negative differential resistance creation in strongly delta-doped (1D) superlattices

T. Ferrus, B. Goutiers, L. Ressier +3

The "atomic saw method" uses the passage of dislocations in two-dimensional (2D) quantum-well superlattices to create periodic slipping layers and one-dimensional (1D) quantum wire…

cond-mat.mes-hall20072 cited

GaAs delta-doped quantum wire superlattice characterization by quantum Hall effect and Shubnikov de Haas oscillations

T. Ferrus, B. Goutiers, J. Galibert +2

Quantum wire superlattices (1D) realized by controlled dislocation slipping in quantum well superlattices (2D) (atomic saw method) have already shown magnetophonon oscillations. Th…

cond-mat.str-el20072 cited

Variation of the hopping exponent in disordered silicon MOSFETs

T. Ferrus, R. George, C. H. W. Barnes +3

We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was…