20 citations · 155 across the 26 of their papers we have counts for
15 papers · 1 filter
Engineering single donor detectors in doped silicon
A. A. Lasek, C. H. W. Barnes, T. Ferrus
We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structu…
4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato +5
We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two…
Dirac Quantum Wells at Domain Walls in Antiferromagnetic Topological Insulators
N. B. Devlin, T. Ferrus, C. H. W. Barnes
We explore the emergence of spin-polarised flat-bands at head-to-head domain walls in a recently predicted class of antiferromagnetic topological insulators hosting planar magnetis…
GHz photon-activated hopping between localized states in a silicon quantum dot
T. Ferrus, A. Rossi, A. Andreev +5
We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the…
Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots
M. F. Gonzalez-Zalba, J. Galibert, F. Iacovella +2
We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensi…
Electron temperature in electrically isolated Si double quantum dots
A. Rossi, T. Ferrus, D. A. Williams
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated doubl…