Single shot measurement of a silicon single electron transistor

Abstract

We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing.

References in corpus (4)

• Decoherence, einselection, and the quantum origins of the classical
• Charge-qubit operation of an isolated double quantum dot
• Full Frequency Back-Action Spectrum of a Single Electron Transistor during Qubit read-out
• Modelling background charge rearrangements near single-electron transistors as a Poisson process

Cited by in corpus (4)

• Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
• Detection of charge motion in a non-metallic silicon isolated double quantum dot
• Cryogenic instrumentation for fast current measurement in a silicon single electron transistor
• GHz photon-activated hopping between localized states in a silicon quantum dot