1 citations · 2 across the 11 of their papers we have counts for
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4 MV/cm (010) -GaO Heterojunction Diodes Realized by Low-Damage e-Beam NiO Interlayers
Carl Peterson, Yizheng Liu, Chinmoy Nath Saha +3
We report on the utilization of a low-damage e-beam NiO deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) -GaO films with high crit…
VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
Yizheng Liu, Carl Peterson, Chinmoy Nath Saha +2
Beta-gallium oxide (β-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 mΩ*cm2 class edge terminated…
Evidence of Micron-Scale Ion Damage in (010), (110), and (011) Epitaxial Layers
Carl Peterson, Chinmoy Nath Saha, Yizheng Liu +2
We report on the experimental observation of up to 11.5 deep charge depletion in (010), (110), and (011) epitaxial layers due to ion damage from sputtering and ind…
Beta-AlGaO/Ga2O3 Tri-Gate MOSHEMT with 70GHz fT and 55GHz fmax
Noor Jahan Nipu, Chinmoy Nath Saha, Uttam Singisetti
We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabric…