1 citations · 2 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025★ 1 cited
High performance vacuum annealed beta-(AlxGa1-x)2O3/Ga2O3 HFET with f_T/f_MAX of 32/65 GHz
Chinmoy Nath Saha, Noor Jahan Nipu, Uttam Singisetti
This letter reports high performance beta-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with improved regrowth process. Highly scaled I shaped gate have been fabricated with degen…
cond-mat.mtrl-sci2022★ 1 cited
Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…