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Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
Yizheng Liu, Haochen Wang, Carl Peterson +3
This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3…
2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
Chinmoy Nath Saha, Saurav Roy, Yizheng Liu +2
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron d…
Kilovolt-Class Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally Doped Drift Layers
Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4
We report on the growth optimization of intentionally low-doped ( ) high-quality drift layers up to 10 thick via MOCVD and the fabrication of kil…
High performance vacuum annealed beta-(AlxGa1-x)2O3/Ga2O3 HFET with f_T/f_MAX of 32/65 GHz
Chinmoy Nath Saha, Noor Jahan Nipu, Uttam Singisetti
This letter reports high performance beta-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) with improved regrowth process. Highly scaled I shaped gate have been fabricated with degen…