2 papers
cond-mat.mes-hall2024
Orthogonal Spin-Orbit Torque-Induced Deterministic Switching in NiO
Yixiao Qiao, Zhengde Xu, Zhuo Xu +2
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antif…
cond-mat.mes-hall2024
Anomalous switching pattern in the ferrimagnetic memory cell
Zhuo Xu, Zhengping Yuan, Xue Zhang +4
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that con…