61 citations · 567 across the 60 of their papers we have counts for
21 papers · 1 filter
Ultralow p-type contact resistance for ultra-nanoscaled 2D-materials transistors
Ying Xiong, Tong Su, Qiang Li +3
High contact resistance is one of the main bottlenecks for practical two-dimensional (2D) materials transistors, especially for p-type transistors and future 2D ultra-nanoscaled (s…
Pure Spin Photocurrent in Altermagnetic Photovoltaic Battery
Qiang Li, Shibo Fang, Zongmeng Yang +11
Altermagnets, featuring momentum-dependent spin splitting without net magnetization, provide a promising platform for spintronic functionalities beyond conventional ferromagnets an…
One-dimensional electronics with edge states in two-dimensional altermagnets
Shibo Fang, Zongmeng Yang, Jianhua Wang +5
The coupling between real-space inhomogeneities coordinates and spin (r-s) provides an alternative route to achieve efficient spin manipulation in spintronics beyond the convention…
Unconventional tunnel magnetoresistance scaling with altermagnets
Zongmeng Yang, Xingyue Yang, Jianhua Wang +7
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configu…
All-Electrical Layer-Spintronics in Altermagnetic Bilayer
Rui Peng, Jin Yang, Lin Hu +5
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme…
Two-dimensional Weyl nodal-line semimetal and antihelical edge states in a modified Kane-Mele model
Xiaokang Dai, Pei-Hao Fu, Yee Sin Ang +1
The Kane-Mele model has been modified to achieve versatile topological phases. Previous work [Phys. Rev. Lett. 120, 156402 (2018)] introduced a staggered intrinsic spin-orbit coupl…
Floquet engineering of topological phase transitions in quantum spin Hall - system
Kok Wai Lee, Mateo Jalen Andrew Calderon, Xiang-Long Yu +3
Floquet engineering of topological phase transitions driven by a high-frequency time-periodic field is a promising approach to realizing new topological phases of matter distinct f…
Transverse Cooper-Pair Rectifier
Pei-Hao Fu, Yong Xu, Jun-Feng Liu +2
Non-reciprocal devices are key components in modern electronics covering broad applications ranging from transistors to logic circuits thanks to the output rectified signal in the…
Nano-ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
Teymour Talha-Dean, Yaoju Tarn, Subhrajit Mukherjee +11
Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and o…
Altermagnetic Schottky Contact
Yee Sin Ang
Altermagnet is an emerging antiferromagnetic material subclass that exhibits spin-splitting in momentum space without net global magnetization and spin-orbit-coupling effect. In th…
Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection
Xukun Feng, Chit Siong Lau, Shi-Jun Liang +3
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be inc…
Over-Barrier Photoelectron Emission with Rashba Spin-Orbit Coupling
Bi Hong Tiang, Yee Sin Ang, L. K. Ang
We develop a theoretical model to calculate the quantum efficiency (QE) of photoelectron emission from materials with Rashba spin-orbit coupling (RSOC) effect. In the low temperatu…
Universal Model of Optical-Field Electron Tunneling from Two-Dimensional Materials
Yi Luo, Yee Sin Ang, L. K. Ang
We develop analytical models of optical-field electron tunneling from the edge and surface of two-dimensional (2D) materials, including the effects of reduced dimensionality, non-p…
Quantum Shot Noise Signatures of Two-Dimensional Semi-Dirac System
Wei Jie Chan, L. K. Ang, Yee Sin Ang
Two-dimensional (D) semi-Dirac systems, such as D black phosphorus and arsenene, can exhibit a rich topological phase transition between insulating, semi-Dirac, and band inve…
Field-Effect Josephson Diode via Asymmetric Spin-Momentum-Locking States
Pei-Hao Fu, Yong Xu, Shengyuan A. Yang +3
Recent breakthroughs in Josephson diodes dangle the possibility of extending conventional non-reciprocal electronics into the realm of superconductivity. While a strong magnetic fi…
High-performance and Low-power Transistors Based on Anisotropic Monolayer -TeO
Shiying Guo, Hengze Qu, Wenhan Zhou +5
Two-dimensional (2D) semiconductors offer a promising prospect for high-performance and energy-efficient devices especially in the sub-10 nm regime. Inspired by the successful fabr…
Universal model for electron thermal-field emission from two-dimensional semimetals
L. K. Ang, Yee Sin Ang, Ching Hua Lee
We present the theory of out-of-plane (or vertical) electron thermal-field emission from 2D semimetals. We show that the current-voltage-temperature characteristic is well-captured…
Relativistic space-charge-limited current for massive Dirac fermions
Y. S. Ang, M. Zubair, L. K. Ang
A theory of relativistic space-charge-limited current (SCLC) is formulated to determine the SCLC scaling, , for a finite bandgap Dirac material of length bias…
Current-temperature scaling for a Schottky interface with non-parabolic energy dispersion
Y. S. Ang, L. K. Ang
In this paper, we study the Schottky transport in narrow-gap semiconductor and few-layer graphene in which the energy dispersions are highly non-parabolic. We propose that the cont…
Nonlocal transistor based on pure crossed Andreev reflection in a EuO-graphene/superconductor hybrid structure
Yee Sin Ang, L. K. Ang, C. Zhang +1
We study the interband transport in a superconducting device composed of graphene with EuO-induced exchange interaction. We show that pure crossed Andreev reflection can be generat…
Klein tunneling and cone transport in AA-stacked bilayer graphene
Matthew Sanderson, Yee Sin Ang, Chao Zhang
We investigate the quantum tunneling of electrons in an AA-stacked bilayer graphene (BLG) - junction and -- junction. We show that Klein tunneling of an electron can…