activity
20132026
most citedTunable electronic properties and band alignments of MoSiN/GaN and MoSiN/ZnO van der Waals heterostructures

61 citations · 567 across the 60 of their papers we have counts for

collaborators

62 papers

cond-mat.mtrl-sci2026

High-Throughput Computational Discovery of Inverted Resistive Switching in Two-Dimensional Materials

Sanchali Mitra, Arnab Kabiraj, Benjamin W. J. Chen +8

Atomristors, non-volatile resistive switching devices based on two-dimensional (2D) monolayers, are promising building blocks for energy-efficient memory and neuromorphic computing…

cond-mat.mes-hall2026

Ultralow p-type contact resistance for ultra-nanoscaled 2D-materials transistors

Ying Xiong, Tong Su, Qiang Li +3

High contact resistance is one of the main bottlenecks for practical two-dimensional (2D) materials transistors, especially for p-type transistors and future 2D ultra-nanoscaled (s…

cond-mat.mtrl-sci2026

Hybrid-parity sliding multiferroics

Zhenzhou Guo, Jiangtao Yu, Shibo Fang +6

In this work, we introduce a class of hybrid-parity sliding multiferroics in which the spontaneous ferroelectric polarization is coupled to certain nonrelativistic spin splitting c…

physics.optics2026

Mirror-Symmetry-Enforced Photonic Altermagnet

Chong Cao, Xiong-Xiong Xue, Yee Sin Ang +1

Altermagnets host momentum-dependent spin splitting without net magnetization, a symmetry-enforced band phenomenon whose photonic analogues have so far been realized only in square…

cond-mat.mes-hall2026

Pure Spin Photocurrent in Altermagnetic Photovoltaic Battery

Qiang Li, Shibo Fang, Zongmeng Yang +11

Altermagnets, featuring momentum-dependent spin splitting without net magnetization, provide a promising platform for spintronic functionalities beyond conventional ferromagnets an…

physics.app-ph2026

Chips in the Flatland : 2D Semiconductors for Future Computing Electronic

Narin Trakarnvanich, Mitra Sanchali, Tong Su +6

As transistor scaling approaches its fundamental physical limits in the Angstrom era, two-dimensional (2D) semiconductors have emerged as the promising channel material candidates…

physics.optics2026

Tunable high- Janus-to-chiral bound states in the continuum in bilayer PhCs

Zhexing Dong, Shengxuan Xia, Yee Sin Ang +1

We propose a bilayer all-dielectric PhC for controlling Janus bound states in the continuum (BIC) and optical chirality through symmetry-selective perturbations. Starting from a sy…

cs.HC2026

SemiConLens: Visual Analytics for 2D Semiconductor Discovery

Kavinda Athapaththu, Shiwei Chen, Yuan Fang +3

The past few years have witnessed vibrant efforts in discovering new two-dimensional (2D) semiconductor materials from both academia and the industry, due to their promising potent…

cond-mat.mtrl-sci2026

Ferroelectric Band Twinning from Pair-State Symmetry

Shibo Fang, Jianhua Wang, Zhenzhou Guo +7

Ferroelectric switching provides a nonvolatile way to control electronic structures, but a general symmetry rule connecting the full Bloch bands of two switchable polarization stat…

quant-ph2026

Anyon-Induced Criticality and Dynamical Stability in Non-Hermitian Many-Body Systems

Yi Qin, Yee Sin Ang, Linhu Li +1

We show that anyonic statistics fundamentally reshapes non-Hermitian many-body physics by intrinsically breaking pseudo-Hermiticity, leading to a unique real-complex spectral trans…

cond-mat.mtrl-sci2025★ 8 cited

Altermagnetic Flatband-Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance

Xingyue Yang, Shibo Fang, Zongmeng Yang +3

Altermagnetism, characterized by zero net magnetization and symmetry-protected spin-split band structures, has recently emerged as a promising platform for spintronics. In altermag…

cond-mat.mtrl-sci2025★ 2 cited

Two-Dimensional Altermagnetism in Epitaxial CrSb Ultrathin Films

Keren Li, Yuzhong Hu, Yue Li +12

Altermagnets constitute an emerging class of collinear magnets that exhibit zero net magnetization yet host spin-split electronic bands arising from non-relativistic spin-space-gro…

cond-mat.other2025

Generalized Brillouin Zone Fragmentation

Haiyu Meng, Yee Sin Ang, Ching Hua Lee

The Generalized Brillouin Zone (GBZ) encodes how lattice momentum is complex-deformed due to non-Hermitian skin accumulation, and has proved essential in restoring bulk-boundary co…

cond-mat.mes-hall2025

One-dimensional electronics with edge states in two-dimensional altermagnets

Shibo Fang, Zongmeng Yang, Jianhua Wang +5

The coupling between real-space inhomogeneities coordinates and spin (r-s) provides an alternative route to achieve efficient spin manipulation in spintronics beyond the convention…

cond-mat.mtrl-sci2025

Ferroelastic Altermagnetism

Rui Peng, Shibo Fang, Pin Ho +3

Synergizing altermagnetism and other ferroic orders, such as ferroelectric switchable altermagnetism [Phys. Rev. Lett. 134, 106801 (2025) and ibid. 106802 (2025)], offers an effect…

cond-mat.mes-hall2025★ 1 cited

Unconventional tunnel magnetoresistance scaling with altermagnets

Zongmeng Yang, Xingyue Yang, Jianhua Wang +7

In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configu…

cond-mat.mtrl-sci2024

Zero-Dipole Schottky Contact: Homologous Metal Contact to 2D Semiconductor

Che Chen Tho, Yee Sin Ang

Band alignment of metal contacts to 2D semiconductors often deviate from the ideal Shottky-Mott (SM) rule due to the non-ideal factors such as the formation of interface dipole and…

cond-mat.mes-hall2024

All-Electrical Layer-Spintronics in Altermagnetic Bilayer

Rui Peng, Jin Yang, Lin Hu +5

Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme…

cond-mat.mtrl-sci2024

Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes

Linqiang Xu, Yue Hu, Lianqiang Xu +6

Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against shor…

cond-mat.mes-hall2024★ 10 cited

Two-dimensional Weyl nodal-line semimetal and antihelical edge states in a modified Kane-Mele model

Xiaokang Dai, Pei-Hao Fu, Yee Sin Ang +1

The Kane-Mele model has been modified to achieve versatile topological phases. Previous work [Phys. Rev. Lett. 120, 156402 (2018)] introduced a staggered intrinsic spin-orbit coupl…

cond-mat.mes-hall2024★ 17 cited

Floquet engineering of topological phase transitions in quantum spin Hall - system

Kok Wai Lee, Mateo Jalen Andrew Calderon, Xiang-Long Yu +3

Floquet engineering of topological phase transitions driven by a high-frequency time-periodic field is a promising approach to realizing new topological phases of matter distinct f…

cond-mat.mtrl-sci2024

Small exciton effective mass in QL Bi2Se2Te: A material platform towards high-temperature excitonic condensate

Yuanyuan Wang, Ying Dai, Baibiao Huang +2

Using first-principles simulations combined with many-body calculations, we show that two-dimensional free-standing quintuple-layer Bi2Se2Te is an inversion symmetric monolayer exp…

quant-ph2024★ 10 cited

Strongly correlated multi-electron bunches from interaction with quantum light

Suraj Kumar, Jeremy Lim, Nicholas Rivera +4

Strongly correlated electron systems are a cornerstone of modern physics, being responsible for groundbreaking phenomena from superconducting magnets to quantum computing. In most…

cond-mat.mes-hall2024★ 8 cited

Transverse Cooper-Pair Rectifier

Pei-Hao Fu, Yong Xu, Jun-Feng Liu +2

Non-reciprocal devices are key components in modern electronics covering broad applications ranging from transistors to logic circuits thanks to the output rectified signal in the…