61 citations · 567 across the 60 of their papers we have counts for
19 papers · 1 filter
Electric-filed tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayer
San-Dong Guo, Yu-Ling Tao, Zi-Yang Zhuo +2
The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propos…
Interplay between Haldane and modified Haldane models in - lattice: Band structures, phase diagrams and edge states
Kok Wai Lee, Pei-Hao Fu, Yee Sin Ang
We study the topological properties of the Haldane and modified Haldane models in - lattice. The band structures and phase diagrams of the system are investigated. Indivi…
Ultrathick MAN(M'N) Intercalated Monolayers with Sublayer-Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications
Che Chen Tho, Xukun Feng, Zhuoling Jiang +4
Recent discovery of ultrathick monolayers open up an exciting platform to engineer 2D material properties via intercalation architecture. Here we comput…
Sub-5-nm Ultra-thin InO Transistors for High-Performance and Low-Power Electronic Applications
Linqiang Xu, Lianqiang Xu, Jun Lan +7
Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT in…
Exceptional points in non-Hermitian Photonics: Applications and Recent Developments
Haiyu Meng, Yee Sin Ang, Ching Hua Lee
Exceptional points are complex branching singularities of non-Hermitian bands that have lately attracted considerable interest, particularly in non-Hermitian photonics. In this art…
Altermagnetic Schottky Contact
Yee Sin Ang
Altermagnet is an emerging antiferromagnetic material subclass that exhibits spin-splitting in momentum space without net global magnetization and spin-orbit-coupling effect. In th…
How to produce spin-splitting in antiferromagnetic materials
San-Dong Guo, Guang-Zhao Wang, Yee Sin Ang
Antiferromagnetic (AFM) materials have potential advantages for spintronics due to their robustness, ultrafast dynamics, and magnetotransport effects. However, the missing spontane…
Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection
Xukun Feng, Chit Siong Lau, Shi-Jun Liang +3
Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be inc…
Electric-field induced half-metal in monolayer CrSBr
Hao-Tian Guo, San-Dong Guo, Yee Sin Ang
Two-dimensional (2D) half-metallic materials are highly desirable for nanoscale spintronic applications. Here, we propose a new mechanism that can achieve half-metallicity in 2D fe…
Experimental observation of exceptional bound states in a classical circuit network
Deyuan Zou, Tian Chen, Haiyu Meng +3
Exceptional bound (EB) states represent an unique new class of robust bound states protected by the defectiveness of non-Hermitian exceptional points. Conceptually distinct from th…
Injection-Limited and Space-Charge-Limited Conduction in Wide Bandgap Semiconductors with Velocity Saturation Effect
Kok Wai Lee, Yee Sin Ang
Carrier conduction in wide bandgap semiconductors (WBS) often exhibits velocity saturation at the high-electric field regime. How such effect influences the transition between cont…
Over-Barrier Photoelectron Emission with Rashba Spin-Orbit Coupling
Bi Hong Tiang, Yee Sin Ang, L. K. Ang
We develop a theoretical model to calculate the quantum efficiency (QE) of photoelectron emission from materials with Rashba spin-orbit coupling (RSOC) effect. In the low temperatu…
Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices
Linqiang Xu, Lianqiang Xu, Qiuhui Li +7
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET a…
Towards Sustainable Ultrawide Bandgap Van der Waals Materials: An ab initio Screening Effort
Chuin Wei Tan, Linqiang Xu, Chen Chen Er +6
The sustainable development of next-generation device technology is paramount in the face of climate change and the looming energy crisis. Tremendous efforts have been made in the…
Intrinsic persistent spin helix in 2D T-XY (XY=P, As, Sb and Bi)
San-Dong Guo, Xu-Kun Feng, Dong Huang +2
The persistent spin helix (PSH) is robust against spin-independent scattering and renders an extremely long spin lifetime, which can improve the performance of potential spintronic…
MAZ Family Heteorstructures: Promises and Prospects
Che Chen Tho, San-Dong Guo, Shi-Jun Liang +5
Recent experimental synthesis of ambient-stable MoSi2N4 monolayer have garnered enormous research interests. The intercalation morphology of MoSi2N4 - composed of a transition meta…
Universal Model of Optical-Field Electron Tunneling from Two-Dimensional Materials
Yi Luo, Yee Sin Ang, L. K. Ang
We develop analytical models of optical-field electron tunneling from the edge and surface of two-dimensional (2D) materials, including the effects of reduced dimensionality, non-p…
Janus monolayer ScXY (XY=Cl, Br and I) for piezoelectric and valleytronic application: a first-principle prediction
San-Dong Guo, Xiao-Shu Guo, Shuo-Ning Si +3
Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X$\neq…
Quantum Shot Noise Signatures of Two-Dimensional Semi-Dirac System
Wei Jie Chan, L. K. Ang, Yee Sin Ang
Two-dimensional (D) semi-Dirac systems, such as D black phosphorus and arsenene, can exhibit a rich topological phase transition between insulating, semi-Dirac, and band inve…