Relativistic space-charge-limited current for massive Dirac fermions

Abstract

A theory of relativistic space-charge-limited current (SCLC) is formulated to determine the SCLC scaling, $J\propto V^{\alpha }/L^{\beta }$, for a finite bandgap Dirac material of length $L$ biased under a voltage $V$. In a one-dimensional (1D) bulk geometry, our model allows ($\alpha$, $\beta$) to vary from (2,3) for the non-relativistic model in traditional solids to (3/2,2) for the ultra-relativistic model of massless Dirac fermions. For a two-dimensional (2D) thin-film geometry, we obtain $\alpha =\beta$ that varies between 2 and 3/2, respectively, at the non-relativistic and ultra-relativistic limits. We further provide a rigorous proof based on a Green's function approach that for uniform SCLC model described by carrier density-dependent mobility, the scaling relations of the 1D bulk model can be directly mapped into the case of 2D thin film for any contact geometries. Our simplified approach provides a convenient tool to obtain the 2D thin-film SCLC scaling relations without the need of explicitly solving the complicated 2D problems. Finally, this work clarifies the inconsistency in using the traditional SCLC models to explain the experimental measurement of 2D Dirac semiconductor. We conclude that the voltage-scaling $3/2<\alpha <2$ is a distinct signature of massive Dirac fermions in Dirac semiconductor and is in agreement with experimental SCLC measurement in MoS${}_2$.

13 pages, 5 figures, accepted Phys. Rev. B (2017)

References in corpus (5)

• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering
• Space-Charge-Limited Current Fluctuations in Organic Semiconductors
• Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description
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