6 papers
Tackling Disorder in -GaO
Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert +19
GaO and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as GaO offers potential for electronic struc…
Offcut-related step-flow and growth rate enhancement during (100) -Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
Piero Mazzolini, Andreas Falkenstein, Zbigniew Galazka +2
In this work we investigate the growth of -Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (ME…
SnO/-Ga2O3 vertical heterojunction diodes
Melanie Budde, Daniel Splith, Piero Mazzolini +6
Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…
Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass
Melanie Budde, Piero Mazzolini, Johannes Feldl +6
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be dope…
Influence of Polymorphism on the Electronic Structure of GaO
Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini +21
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. GaO has emerged as an altern…
Towards smooth (010) beta-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio
Piero Mazzolini, Oliver Bierwagen
Smooth interfaces and surfaces are beneficial for most (opto)electronic devices based on thin films and their heterostructures. For example, smoother interfaces in (010) beta-Ga2O3…