96 citations · 342 across the 11 of their papers we have counts for
11 papers
-GaO(001) surface reconstructions from first principles and experiment
Konstantin Lion, Piero Mazzolini, Kingsley Egbo +4
We present a comprehensive investigation of reconstructions on -GaO(001) combining first-principles calculations with experimental observations. Using ab initio atomisti…
Spectral tuning of hyperbolic shear polaritons in monoclinic gallium oxide via isotopic substitution
Giulia Carini, Mohit Pradhan, Elena Gelzinyte +26
Hyperbolic phonon polaritons - hybridized modes arising from the ultrastrong coupling of infrared light to strongly anisotropic lattice vibrations in uniaxial or biaxial polar crys…
Phase-selective growth of - vs -GaO and (InGa)O by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy
A. Ardenghi, O. Bierwagen, J. Lähnemann +4
Its piezo- and potentially ferroelectric properties make the metastable kappa polymorph of GaO an interesting material for multiple applications, while In-incorporation int…
Tackling Disorder in -GaO
Laura E. Ratcliff, Takayoshi Oshima, Felix Nippert +19
GaO and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as GaO offers potential for electronic struc…
Towards controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to -Ga2O3
A. Ardenghi, O. Bierwagen, A. Falkenstein +4
The oxidation-related issues in controlling Si doping from the Si source material in oxide molecular beam epitaxy (MBE) is addressed by using solid SiO as an alternative source mat…
Offcut-related step-flow and growth rate enhancement during (100) -Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)
Piero Mazzolini, Andreas Falkenstein, Zbigniew Galazka +2
In this work we investigate the growth of -Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (ME…
SnO/-Ga2O3 vertical heterojunction diodes
Melanie Budde, Daniel Splith, Piero Mazzolini +6
Vertical heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped -type SnO layers with hole concentrations ranging from $p=10…
Isotopic study of Raman active phonon modes in -GaO
Benjamin M. Janzen, Piero Mazzolini, Roland Gillen +5
Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study o…
Plasma-assisted molecular beam epitaxy of SnO(001) films: Metastability, hole transport properties, Seebeck coefficient, and effective hole mass
Melanie Budde, Piero Mazzolini, Johannes Feldl +6
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be dope…
Influence of Polymorphism on the Electronic Structure of GaO
Jack E. N. Swallow, Christian Vorwerk, Piero Mazzolini +21
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. GaO has emerged as an altern…
Towards smooth (010) beta-Ga2O3 films homoepitaxially grown by plasma assisted molecular beam epitaxy: The impact of substrate offcut and metal-to-oxygen flux ratio
Piero Mazzolini, Oliver Bierwagen
Smooth interfaces and surfaces are beneficial for most (opto)electronic devices based on thin films and their heterostructures. For example, smoother interfaces in (010) beta-Ga2O3…